发明授权
- 专利标题: Barrier cap for under bump metal
- 专利标题(中): 阻挡金属凸块
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申请号: US10154931申请日: 2002-05-28
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公开(公告)号: US06501185B1公开(公告)日: 2002-12-31
- 发明人: Yeung Ming Chow , Zaheed Sadrudin Karim
- 申请人: Yeung Ming Chow , Zaheed Sadrudin Karim
- 主分类号: H01L2348
- IPC分类号: H01L2348
摘要:
A semiconductor wafer having solder bumps thereon for use in flip-chip bonded integrated circuits comprises a semiconductor substrate formed with metal bond pads at selected locations thereon, a metal electroplating buss layer or layers over the bond pads, a layer of solder-wettable under bump metal on the buss layer, a layer of barrier metal which overlies and encapsulates the solder-wettable metal, and a solder bump formed on the barrier metal.
公开/授权文献
- US20020185733A1 BARRIER CAP FOR UNDER BUMP METAL 公开/授权日:2002-12-12
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