发明授权
- 专利标题: Silicon carbide composites and methods for making same
- 专利标题(中): 碳化硅复合材料及其制造方法
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申请号: US09621562申请日: 2000-07-21
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公开(公告)号: US06503572B1公开(公告)日: 2003-01-07
- 发明人: W. Michael Waggoner , Barry R. Rossing , Michael A. Richmond , Michael K. Aghajanian , Allyn L. McCormick
- 申请人: W. Michael Waggoner , Barry R. Rossing , Michael A. Richmond , Michael K. Aghajanian , Allyn L. McCormick
- 主分类号: B05D118
- IPC分类号: B05D118
摘要:
Improved silicon carbide composites made by an infiltration process feature a metal phase in addition to any residual silicon phase. Not only are properties such as mechanical toughness improved, but the infiltrant can be so engineered as to have much diminished amounts of expansion upon solidification, thereby enhancing net-shape-making capabilities. Further, multi-component infiltrant materials may have a lower liquidus temperature than pure silicon, thereby providing the practitioner greater control over the infiltration process. In particular, the infiltration may be conducted at the lower temperatures, where low-cost but effective bedding or barrier materials can terminate the infiltration process once the infiltrant has migrated through the permeable mass up to the boundary between the mass and the bedding material.
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