发明授权
US06503779B2 Method of manufacturing flip chip type semiconductor device 失效
倒装芯片型半导体器件的制造方法

  • 专利标题: Method of manufacturing flip chip type semiconductor device
  • 专利标题(中): 倒装芯片型半导体器件的制造方法
  • 申请号: US09866404
    申请日: 2001-05-25
  • 公开(公告)号: US06503779B2
    公开(公告)日: 2003-01-07
  • 发明人: Takashi Miyazaki
  • 申请人: Takashi Miyazaki
  • 优先权: JP2000-157432 20000526
  • 主分类号: H01L2160
  • IPC分类号: H01L2160
Method of manufacturing flip chip type semiconductor device
摘要:
A flip chip type semiconductor device is provided with a semiconductor chip with a plurality of pad electrodes on one surface. A solder electrode is connected to each pad electrode and a metallic post is connected to each solder electrode. The surface of the semiconductor chip on a side on which the pad electrodes are provided is coated with an insulating resin layer and whole the pad electrode and solder electrode and part of the metallic post are buried in the insulating resin layer. The remaining portion of the metallic post is projected from the insulating resin layer to for a protrusion. Then, an outer solder electrode is formed so as to cover this protrusion. The outer solder electrodes are arranged in a matrix on the insulating resin layer. The height of the protrusion is made 7 to 50% of the distance between an end of the outer solder electrode and the surface of the insulating resin layer.
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