发明授权
- 专利标题： Method of reducing planarization defects
- 专利标题（中）： 降低平坦化缺陷的方法
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申请号： US09605806申请日： 2000-06-28
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公开(公告)号： US06503827B1公开(公告)日： 2003-01-07
- 发明人: Susan G. Bombardier , Paul M. Feeney , Robert M. Geffken , David V. Horak , Matthew J. Rutten
- 申请人： Susan G. Bombardier , Paul M. Feeney , Robert M. Geffken , David V. Horak , Matthew J. Rutten
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
A method of reducing the planarization defects produced during the manufacture of semiconductor devices. A sacrificial layer, having defects produced during a interconnection feature planarization step, is removed prior to the formation of subsequent layers to reduce the replication of unwanted defects.
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