发明授权
- 专利标题: Process to increase reliability CuBEOL structures
- 专利标题(中): 提高可靠性CuBEOL结构的工艺
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申请号: US09677585申请日: 2000-10-03
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公开(公告)号: US06503834B1公开(公告)日: 2003-01-07
- 发明人: Xiaomeng Chen , Mahadevaiyer Krishnan , Judith M. Rubino , Carlos J. Sambucetti , Soon-Cheon Seo , James A. Tornello
- 申请人: Xiaomeng Chen , Mahadevaiyer Krishnan , Judith M. Rubino , Carlos J. Sambucetti , Soon-Cheon Seo , James A. Tornello
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
The invention provides a process to increase the reliability of BEOL interconnects. The process comprises forming an array of conductors on a dielectric layer on a wafer substrate, polishing the upper surface so that the surfaces of the conductors are substantially co-planar with the upper surface of the dielectric layer, forming an alloy film on the upper surfaces of the conductors, and brush cleaning the upper surfaces of the conductors and the dielectric layer.