- 专利标题： Semiconductor device with dummy wiring layers
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申请号： US09845819申请日： 2001-04-30
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公开(公告)号： US06504254B2公开(公告)日： 2003-01-07
- 发明人: Jun Takizawa
- 申请人： Jun Takizawa
- 优先权： JP2000-132353 20000501
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
A semiconductor device 100 has wiring layers 20a and 20b and a plurality dummy wiring sections 30 provided at the same level where the wiring layers 20a and 20b are formed. The dummy wiring sections 30 have at least one through hole 32.
公开/授权文献
- US20020043715A1 Semiconductor device with dummy wiring layers 公开/授权日：2002-04-18
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