发明授权
- 专利标题： Non-volatile semiconductor memory device improved sense amplification configuration
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申请号： US09931758申请日： 2001-08-20
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公开(公告)号： US06504761B2公开(公告)日： 2003-01-07
- 发明人: Yoshihide Kai , Atsushi Ohba , Isao Nojiri
- 申请人： Yoshihide Kai , Atsushi Ohba , Isao Nojiri
- 优先权： JP2001-034864 20010213
- 主分类号： G11C1600
- IPC分类号： G11C1600
摘要：
In the non-volatile semiconductor memory device, for a current mirror for reading out data of a memory cell, a diode-connected transistor and a cut transistor are provided. The diode-connected transistor makes a precharged voltage level lower than a power supply voltage level. The cut transistor reduces current consumption.
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