发明授权
- 专利标题： Device having a crystalline thin film of complex compound
- 专利标题（中）： 具有复合化合物的结晶薄膜的装置
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申请号： US08801761申请日： 1997-02-18
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公开(公告)号： US06507478B1公开(公告)日： 2003-01-14
- 发明人: Katsumi Sameshima
- 申请人： Katsumi Sameshima
- 优先权： JP5-069659 19930329
- 主分类号： H01G410
- IPC分类号： H01G410
摘要：
It is an object of the present invention to provide a device having a crystalline oxide layer of complex compound which can form a crystalline thin film with high orientation. The lower electrode 13 comprises tantalum layer 11, titanate layer 12 and platinum layer 6, and PZT thin film 8 is formed on the lower electrode 13. Since titanate layer 12 is formed on the lower electrode 13, crystallinity of the PZT thin film can be improved. Therefore, the “lift-off” method can be used with to no thermal treatment needed when forming the platinum layer 6.