发明授权
- 专利标题: Apparatus for low-temperature annealing of metallization microstructures in the production of a microelectronic device
- 专利标题(中): 用于微电子器件生产中金属化微结构的低温退火的装置
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申请号: US09387577申请日: 1999-08-31
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公开(公告)号: US06508920B1公开(公告)日: 2003-01-21
- 发明人: Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
- 申请人: Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
- 主分类号: C25D1700
- IPC分类号: C25D1700
摘要:
A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.