发明授权
US06509234B1 Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate
有权
用T形栅极制造超薄全耗尽SOI器件的方法
- 专利标题： Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate
- 专利标题（中）： 用T形栅极制造超薄全耗尽SOI器件的方法
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申请号： US10200652申请日： 2002-07-22
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公开(公告)号： US06509234B1公开(公告)日： 2003-01-21
- 发明人: Zoran Krivokapic
- 申请人： Zoran Krivokapic
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A method of forming a fully depleted semiconductor-on-insulator (SOI) field effect transistor (FET). The method includes forming a T-shaped gate electrode formed at least in part in a recess formed in a layer of semiconductor material and over a body region that is disposed between a source and a drain. The method includes spacing the gate electrode from the body by a gate dielectric made from a high-K material.
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