Method of forming a silicon oxide layer on a substrate

Invention Grant

US06511924B2 Method of forming a silicon oxide layer on a substrate 失效

Title translation: 在基板上形成氧化硅层的方法

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Patent Title: Method of forming a silicon oxide layer on a substrate
Patent Title (中): 在基板上形成氧化硅层的方法
Application No.: US09839337

Application Date: 2001-04-20
Publication No.: US06511924B2

Publication Date: 2003-01-28
Inventor: Kevin Mukai , Srinivas Nemani
Applicant: Kevin Mukai , Srinivas Nemani
Main IPC: H01L2131
IPC: H01L2131

Method of forming a silicon oxide layer on a substrate

Abstract:

A method for forming a silicon oxide layer for use in integrated circuit fabrication is provided. The silicon oxide layer is formed by reacting a first gas mixture and a second gas mixture. The first gas mixture comprises tetra-ethyl-ortho-silicate (TEOS), helium (He) and nitrogen (N2). The second gas mixture comprises ozone (O3) and optionally, oxygen (O2).

Abstract(Chinese):

提供了一种形成用于集成电路制造的氧化硅层的方法。氧化硅层通过使第一气体混合物和第二气体混合物反应而形成。第一气体混合物包括四乙基原硅酸盐（TEOS），氦（He）和氮气（N 2）。第二气体混合物包括臭氧（O 3）和任选的氧（O 2）。

Public/Granted literature

US20020155730A1 Deposition of silicon oxide films Public/Granted day:2002-10-24

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