发明授权
US06512244B1 SOI device with structure for enhancing carrier recombination and method of fabricating same
有权
具有用于增强载流子复合的结构的SOI器件及其制造方法
- 专利标题： SOI device with structure for enhancing carrier recombination and method of fabricating same
- 专利标题（中）： 具有用于增强载流子复合的结构的SOI器件及其制造方法
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申请号： US09850392申请日： 2001-05-07
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公开(公告)号： US06512244B1公开(公告)日： 2003-01-28
- 发明人: Dong-Hyuk Ju , William G. En , Srinath Krishnan , Xilin Judy An
- 申请人： Dong-Hyuk Ju , William G. En , Srinath Krishnan , Xilin Judy An
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A semiconductor-on-insulator (SOI) device. The SOI device includes an SOI wafer including an active layer, a substrate and a buried insulation layer disposed therebetween. The active layer includes an abrupt region disposed along a lower portion of the active layer, the abrupt region having the same P or N doping type as a doping type of a body region.
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