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US06513081B2 Memory device which receives an external reference voltage signal 失效
接收外部参考电压信号的存储器件

  • Patent Title: Memory device which receives an external reference voltage signal
  • Patent Title (中): 接收外部参考电压信号的存储器件
  • Application No.: US09916493
    Application Date: 2001-07-26
  • Publication No.: US06513081B2
    Publication Date: 2003-01-28
  • Inventor: Michael Farmwald , Mark Horowitz
  • Applicant: Michael Farmwald , Mark Horowitz
  • Main IPC: G06F1200
  • IPC: G06F1200
Memory device which receives an external reference voltage signal
Abstract:
A memory device and a method of operation of the memory device. The memory device includes an array of memory cells and a reference voltage input terminal to receive an external reference voltage. In addition, the memory device includes an input receiver, coupled to the reference voltage input terminal, to sample data from an external signal line using the external reference voltage.
Abstract(Chinese):

存储装置和存储装置的操作方法。 存储器件包括存储单元阵列和用于接收外部参考电压的参考电压输入端子。 此外，存储器件包括耦合到参考电压输入端的输入接收器，以使用外部参考电压从外部信号线采样数据。

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