Invention Grant
- Patent Title: Aggregate dielectric layer to reduce nitride consumption
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Application No.: US09789455Application Date: 2001-02-19
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Publication No.: US06514882B2Publication Date: 2003-02-04
- Inventor: Kevin M. Mukai , Shankar Chandran
- Applicant: Kevin M. Mukai , Shankar Chandran
- Main IPC: H07L21469
- IPC: H07L21469

Abstract:
A method including over a substrate, forming an aggregate comprising a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous, and after forming the aggregate, thermally treating the substrate. An apparatus including a substrate and an aggregate formed over the substrate including a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous.
Public/Granted literature
- US20020115302A1 Aggregate dielectric layer to reduce nitride consumption Public/Granted day:2002-08-22
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