发明授权
- 专利标题: Low cost three-dimensional memory array
- 专利标题(中): 低成本三维存储阵列
-
申请号: US09928969申请日: 2001-08-13
-
公开(公告)号: US06515888B2公开(公告)日: 2003-02-04
- 发明人: Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , P. Michael Farmwald , N. Johan Knall
- 申请人: Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , P. Michael Farmwald , N. Johan Knall
- 主分类号: G11C1100
- IPC分类号: G11C1100
摘要:
A low-cost memory cell array includes multiple, vertically-stacked layers of memory cells. In one form, each memory cell is characterized by a small cross-sectional area and a read current less than 6.3 microamperes. The resulting memory array has a slow access time and is well-suited for digital media storage, where access time requirements are low and the dramatic cost reductions associated with the disclosed memory arrays are particularly attractive. In another form, each memory cell includes an antifuse layer and diode components, wherein at least one diode component is heavily doped (to a dopant concentration greater than 1019/cm3), and wherein the read current is large (up to 500 mA).
公开/授权文献
- US20020075719A1 Low-cost three-dimensional memory array 公开/授权日:2002-06-20
信息查询