发明授权
- 专利标题: Multi-Thickness silicide device formed by succesive spacers
- 专利标题(中): 由连续间隔件形成的多层硅化物器件
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申请号: US09824418申请日: 2001-04-02
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公开(公告)号: US06518631B1公开(公告)日: 2003-02-11
- 发明人: William G. En , Srinath Krishnan , Dong-Hyuk Ju , Bin Yu
- 申请人: William G. En , Srinath Krishnan , Dong-Hyuk Ju , Bin Yu
- 主分类号: H01L31113
- IPC分类号: H01L31113
摘要:
A transistor device formed on a semiconductor-on-insulator (SOI) substrate with a buried oxide (BOX) layer disposed thereon and an active layer disposed on the BOX layer having active regions defined by isolation trenches. The device includes a gate defining a channel interposed between a source and a drain formed within the active region of the SOI substrate. Further, the device includes a plurality of thin silicide layers formed on the source and the drain. Additionally, at least an upper silicide layer of the plurality of thin silicide layers extends beyond a lower silicide layer. Further still, the device includes a plurality of spacers used in the formation of the device. The device further includes a second plurality of thin silicide layers formed on a polysilicon electrode of the gate.
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