- 专利标题: Probe structure and manufacturing method thereof
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申请号: US09748021申请日: 2000-12-27
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公开(公告)号: US06518781B2公开(公告)日: 2003-02-11
- 发明人: Kenichi Masuda
- 申请人: Kenichi Masuda
- 优先权: JP11-370169 19991227
- 主分类号: G01R1073
- IPC分类号: G01R1073
摘要:
In a probe structure which has a bump contact protruded from one surface of an insulating substrate, the bump contact is deposited such that a surface roughness falls within a predetermined range specified by Rmax within a range from 0.01 to 0.8 &mgr;m, Ra within a range from 0.001 to 0.4 &mgr;m, and a ratio of Rmax/Ra within a range from 2 to 10. Such a surface roughness is realized by depositing a convex/concave layer formed by aggregation of fine grains. The convex/concave layer is directly deposited to a basic shape portion without any intermediate layer left between the convex/concave layer and the basic shape portion.
公开/授权文献
- US20020008535A1 Probe structure and manufacturing method thereof 公开/授权日:2002-01-24
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