发明授权
US06524945B2 Method of making an anti-reflection structure for a conductive layer in a semiconductor device
失效
在半导体器件中制造用于导电层的抗反射结构的方法
- 专利标题： Method of making an anti-reflection structure for a conductive layer in a semiconductor device
- 专利标题（中）： 在半导体器件中制造用于导电层的抗反射结构的方法
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申请号： US10132213申请日： 2002-04-26
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公开(公告)号： US06524945B2公开(公告)日： 2003-02-25
- 发明人: Haruo Iwasaki
- 申请人： Haruo Iwasaki
- 优先权： JP11-293654 19991015
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
An anti-reflection structure formed on a gate electrode in a MOSFET device includes a first and second anti-reflection layers sandwiching therebetween a silicon nitride layer. Each of the anti-reflection layers has a two-layer structure including a silicon oxide nitride film and a protective silicon oxide film. The anti-reflection layer structure improves the accuracy of the pattern size for the gate electrode.
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