- 专利标题： Non-metallic barrier formations for copper damascene type interconnects
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申请号： US09925819申请日： 2001-08-10
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公开(公告)号： US06531390B2公开(公告)日： 2003-03-11
- 发明人: Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
- 申请人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
- 主分类号： H01L218222
- IPC分类号： H01L218222
摘要：
A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.
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