发明授权
US06531777B1 Barrier metal integrity testing using a dual level line to line leakage testing pattern and partial CMP
失效
屏蔽金属完整性测试采用双层线对线路泄漏测试模式和部分CMP
- 专利标题： Barrier metal integrity testing using a dual level line to line leakage testing pattern and partial CMP
- 专利标题（中）： 屏蔽金属完整性测试采用双层线对线路泄漏测试模式和部分CMP
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申请号： US09599839申请日： 2000-06-22
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公开(公告)号： US06531777B1公开(公告)日： 2003-03-11
- 发明人: Christy Mei-Chu Woo , Amit P. Marathe
- 申请人： Christy Mei-Chu Woo , Amit P. Marathe
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
A structure and method for determining barrier layer integrity for multi-level copper metallization structures in integrated circuit manufacturing. Novel testing structures prevent any conducting residues of the copper CMP from diffusing into the dielectric layer. Barrier layer integrity is tested by performing leakage or other electrical measurements between copper features on two different metal levels.
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