发明授权
US06538256B1 Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance 失效
使用具有用于产生透射共振的孔径图案的光电阴极的电子束光刻系统

  • 专利标题: Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
  • 专利标题(中): 使用具有用于产生透射共振的孔径图案的光电阴极的电子束光刻系统
  • 申请号: US09641099
    申请日: 2000-08-17
  • 公开(公告)号: US06538256B1
    公开(公告)日: 2003-03-25
  • 发明人: Marian MankosVidhya KrishnamurthiKim Y. Lee
  • 申请人: Marian MankosVidhya KrishnamurthiKim Y. Lee
  • 主分类号: H01J3708
  • IPC分类号: H01J3708
Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
摘要:
A method and system for electron beam lithography at high throughput with shorter electron beam column length, reduced electron-electron interactions, and higher beam current. The system includes a photocathode having a pattern composed of a periodic array of apertures with a specific geometry. The spacing of the apertures is chosen so as to maximize the transmission of the laser beam through apertures significantly smaller than the photon wavelength. The patterned photocathode is illuminated by an array of laser beams to allow blanking and gray-beam modulation of the individual beams at the source level by the switching of the individual laser beams in the array. Potential applications for this invention include electron beam direct write on wafers and mask patterning.
信息查询
0/0