Each memory cell of a memory device is connected to a bit line of a memory array and is associated with a read/rewrite amplifier connected between the bit line and a reference bit line. The bit line and the reference bit line are precharged to a predetermined precharge voltage. The content of a selected memory cell is read and refreshed based upon an associated read/rewrite amplifier. Between the precharging and the reading and refreshing, two capacitors previously charged to a charging voltage greater than the precharge voltage are respectively connected to the bit line and to the reference bit line.