发明授权
- 专利标题: Resist compositions and patterning process
- 专利标题(中): 抗蚀剂组合物和图案化工艺
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申请号: US09811695申请日: 2001-03-20
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公开(公告)号: US06541179B2公开(公告)日: 2003-04-01
- 发明人: Jun Hatakeyama , Youichi Ohsawa , Tsunehiro Nishi , Jun Watanabe
- 申请人: Jun Hatakeyama , Youichi Ohsawa , Tsunehiro Nishi , Jun Watanabe
- 优先权: JP2000-077496 20000321
- 主分类号: G03F7004
- IPC分类号: G03F7004
摘要:
A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1). R1 is a monovalent cyclic or bridgedring C3-20, hydrocarbon group, R2 is hydroxyl, nitro, halogen, or a straight, branched or cyclic monovalent C1-15 hydrocarbon group which may contain O, N, S or halogen atom, K− is a non-nucleophilic counter ion, x is equal to 1 or 2, and y is an integer of 0-3. The resist composition is sensitive to ArF excimer laser light, has good sensitivity and resolution, and forms a thick film which is advantageous in etching.
公开/授权文献
- US20010033990A1 Resist compositions and patterning process 公开/授权日:2001-10-25