Invention Grant
- Patent Title: Plasma treatment method and apparatus
- Patent Title (中): 等离子体处理方法和装置
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Application No.: US10079600Application Date: 2002-02-19
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Publication No.: US06544380B2Publication Date: 2003-04-08
- Inventor: Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
- Applicant: Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
- Priority: JP6-106045 19940420; JP6-113587 19940428; JP6-133638 19940524; JP6-142409 19940601
- Main IPC: H05H100
- IPC: H05H100

Abstract:
An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.
Public/Granted literature
- US20020088547A1 Plasma treatment method and apparatus Public/Granted day:2002-07-11
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