- 专利标题： Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device
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申请号： US09884133申请日： 2001-06-20
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公开(公告)号： US06544869B1公开(公告)日： 2003-04-08
- 发明人: Kenji Harafuji , Akihiko Ishibashi , Yuzaburo Ban , Kiyoshi Ohnaka
- 申请人： Kenji Harafuji , Akihiko Ishibashi , Yuzaburo Ban , Kiyoshi Ohnaka
- 优先权： JP2000-188903 20000623
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A method for depositing a semiconductor film on a wafer by making a source gas supplied flow almost horizontally to the surface of the wafer. When a process condition, e.g., the flow velocity or pressure of the source gas, should be changed, the source gas has its velocity and/or pressure changed so that the source gas is supplied at a substantially constant flow rate.