- 专利标题: Semiconductor device, and method of manufacturing the same
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申请号: US09754117申请日: 2001-01-05
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公开(公告)号: US06545336B2公开(公告)日: 2003-04-08
- 发明人: Hiromichi Kobayashi , Takanori Sasaki
- 申请人: Hiromichi Kobayashi , Takanori Sasaki
- 优先权: JP2000-197552 20000630
- 主分类号: H01L2710
- IPC分类号: H01L2710
摘要:
There is described a semiconductor device which has an isolation region, the isolation region being polished by means of chemical-and-mechanical polishing, and which prevents occurrence of variations in a finished state of active regions even in a case where a large isolation area is present. An isolation region for separating active regions is formed on a semiconductor wafer. An annular dummy pattern is formed in an inactive region of greater than a predetermined size, so as to surround the isolation region. An isolation region is ensured between the active regions surrounding the inactive region and the dummy pattern.
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