发明授权
US06545901B2 Semiconductor memory device having a supplemental element for reading data stored in a memory element
有权
具有用于读取存储在存储元件中的数据的补充元件的半导体存储器件
- 专利标题: Semiconductor memory device having a supplemental element for reading data stored in a memory element
- 专利标题(中): 具有用于读取存储在存储元件中的数据的补充元件的半导体存储器件
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申请号: US09953091申请日: 2001-09-13
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公开(公告)号: US06545901B2公开(公告)日: 2003-04-08
- 发明人: Takaaki Fuchikami , Takanori Ozawa
- 申请人: Takaaki Fuchikami , Takanori Ozawa
- 优先权: JP2000-280510 20010914
- 主分类号: G11C1122
- IPC分类号: G11C1122
摘要:
A semiconductor memory device including a memory element for storing data, and a supplemental element substantially electrically associated with the memory element at least at the time of reading data. The semiconductor memory device is for reading data stored in the memory element by applying specified electric action to the compound element including the memory element and the supplemental element substantially electrically mutually associated. The semiconductor memory device is characterized in that the electric characteristic of the supplemental element is adapted to be variable based on a signal for changing the electric characteristic of the supplemental element so that data may be read free from troubles.
公开/授权文献
- US20020044490A1 Semiconductor memory device 公开/授权日:2002-04-18
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