发明授权
- 专利标题： Anodizing apparatus, utilizing a perforated negative electrode
- 专利标题（中）： 阳极氧化装置，利用穿孔的负极
-
申请号： US09526869申请日： 2000-03-16
-
公开(公告)号： US06547938B1公开(公告)日： 2003-04-15
- 发明人: Satoshi Matsumura , Kenji Yamagata
- 申请人： Satoshi Matsumura , Kenji Yamagata
- 优先权： JP11-082352 19990325
- 主分类号： C25D1700
- IPC分类号： C25D1700
摘要：
This invention is to reduce the influence of a gas generated by an anodizing reaction. A silicon substrate (101) to be processed is horizontally held. A negative electrode (129) is arranged on the upper side of the silicon substrate (101), and a positive electrode (114) is brought into contact with the lower surface of the silicon substrate (101). The space between the negative electrode (129) and the silicon substrate (101) is filled with an HF solution (132). The negative electrode (129) has a number of degassing holes (130) to prevent a gas generated by the anodizing reaction from staying on the lower side of the negative electrode (129).
信息查询
