- 专利标题: Semiconductor memory device
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申请号: US10005180申请日: 2001-12-03
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公开(公告)号: US06548848B2公开(公告)日: 2003-04-15
- 发明人: Fumio Horiguchi , Takashi Ohsawa , Yoshihisa Iwata , Takashi Yamada
- 申请人: Fumio Horiguchi , Takashi Ohsawa , Yoshihisa Iwata , Takashi Yamada
- 优先权: JP2001-074236 20010315
- 主分类号: H01L27108
- IPC分类号: H01L27108
摘要:
Each of MIS transistors of a semiconductor memory device has a semiconductor layer (12); a source region (15) formed in the semiconductor layer; a drain region (14) formed apart from the source region in the semiconductor layer, the semiconductor layer between the source region and the drain region serving as a channel body in a floating state; a first gate (13) which forms a channel in the channel body; a second gate (20) formed so as to control a potential of the channel body by a capacitive coupling; and a high concentration region (21) formed in the channel body on the second gate side, impurity concentration of the high concentration region being higher than that of the channel body.
公开/授权文献
- US20020130341A1 Semiconductor memory device 公开/授权日:2002-09-19