Invention Grant
- Patent Title: Substrate handling chamber
- Patent Title (中): 基板处理室
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Application No.: US09727736Application Date: 2000-12-01
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Publication No.: US06550158B2Publication Date: 2003-04-22
- Inventor: Allan Doley , Dennis Goodwin , Kenneth O'Neill , Gerben Vrijburg , David Rodriguez , Ravinder Aggarwal
- Applicant: Allan Doley , Dennis Goodwin , Kenneth O'Neill , Gerben Vrijburg , David Rodriguez , Ravinder Aggarwal
- Main IPC: F26B300
- IPC: F26B300

Abstract:
An apparatus and method for reducing particles in reactors. The apparatus includes an enclosure with a wafer handling chamber connected by an isolation gate valve to a processing chamber. Pipes deliver purge gas into the wafer handling chamber to eliminate particles from the enclosure. A pilot operated back pressure regulator regulates the delivery and removal of the purge gas. The apparatus actuates the isolation gate valve in a controlled rate to reduce disturbances from the purge gas entering into the enclosure. A Bernoulli wand is provided for lifting and holding a single semiconductor wafer. A dome loaded regulator actuated by a pilot gas is used to control the ramp rates of gas to the Bernoulli wand. The ramping rates of the Bernoulli wand gas can be controlled by restrictions and check valves in the pilot gas line. The apparatus also utilizes ionizers in the purge gas lines entering the wafer handling chamber and load locks. Through the use of an alpha particle emission source in the purge gas line prior to the load lock and wafer handling chamber, the purged gas molecules are ionized. The ionized gas is conductive and therefore discharges static so that wafers are no longer attracted to each other by electrostatic force. In addition, the apparatus includes means for reducing gas flow turbulence when switching valves within the reactor.
Public/Granted literature
- US20010000759A1 Substrate handling chamber Public/Granted day:2001-05-03
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