• 专利标题: Method of controlling the microstructures of Cu-Cr-based contact materials for vacuum interrupters and contact materials manufactured by the method
  • 申请号: US09828969
    申请日: 2001-04-10
  • 公开(公告)号: US06551374B2
    公开(公告)日: 2003-04-22
  • 发明人: Jung Mann DohJong Ku ParkMi Jin Kim
  • 申请人: Jung Mann DohJong Ku ParkMi Jin Kim
  • 优先权: KR2000-73926 20001206
  • 主分类号: B22F324
  • IPC分类号: B22F324
Method of controlling the microstructures of Cu-Cr-based contact materials for vacuum interrupters and contact materials manufactured by the method
摘要:
The present invention relates to a method of controlling the microstructures of Cu—Cr-based contact materials for vacuum interrupters, in which a heat-resistant element is added to the Cu—Cr-based contact materials to obtain an excellent current interrupting characteristic and voltage withstanding capability, and contact materials manufactured thereby. The method of controlling the microstructures of Cu—Cr-based contact materials includes the steps of mixing a copper powder used as a matrix material, a chromium powder improving an electrical characteristic of the contact material and a heat-resistant element powder making the chromium particles in the matrix material fine to thereby obtain mixed powder, and subjecting the mixed powder to one treatment selected from sintering, infiltration and hot pressing to thereby obtain a sintered product.
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