发明授权
- 专利标题: Plasma processing system and method for manufacturing a semiconductor device by using the same
- 专利标题(中): 等离子体处理系统及其制造方法
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申请号: US09665045申请日: 2000-09-19
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公开(公告)号: US06551445B1公开(公告)日: 2003-04-22
- 发明人: Ken'etsu Yokogawa , Yoshinori Momonoi , Nobuyuki Negishi , Masaru Izawa , Shinichi Tachi
- 申请人: Ken'etsu Yokogawa , Yoshinori Momonoi , Nobuyuki Negishi , Masaru Izawa , Shinichi Tachi
- 优先权: JP2000-278160 20000913
- 主分类号: H05H100
- IPC分类号: H05H100
摘要:
A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming means are provided so that a the distribution of a direction of a magnetic line of flux on the surface of a planar plate is controlled by a combined magnetic field from the first and second magnetic field-forming means thereby controlling the distribution in degree of the interactions of the magnetic field and an electromagnetic wave. This control ensures the uniformity of a plasma under high density plasma formation conditions, thus enabling one to form a continuous plasma over a wide range of low to high densities. Thus, there can be realized a plasma processing system that ensures processing under wide plasma conditions including high-speed processing under high density conditions.