发明授权
US06551758B2 Onium salts, photoacid generators, resist compositions, and patterning process
有权
鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法
- 专利标题： Onium salts, photoacid generators, resist compositions, and patterning process
- 专利标题（中）： 鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法
-
申请号： US09983154申请日： 2001-10-23
-
公开(公告)号： US06551758B2公开(公告)日： 2003-04-22
- 发明人: Youichi Ohsawa , Jun Watanabe , Kazunori Maeda
- 申请人： Youichi Ohsawa , Jun Watanabe , Kazunori Maeda
- 优先权： JP2000-322182 20001023
- 主分类号： G03F7004
- IPC分类号： G03F7004
摘要：
Onium salts of arylsulfonyloxybenzenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.