发明授权
- 专利标题: Fully nickel silicided metal gate with shallow junction formed
- 专利标题(中): 全镍硅化金属栅极,形成浅结
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申请号: US10058219申请日: 2002-01-29
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公开(公告)号: US06555453B1公开(公告)日: 2003-04-29
- 发明人: Qi Xiang , Christy Mei-Chu Woo , George J. Kluth
- 申请人: Qi Xiang , Christy Mei-Chu Woo , George J. Kluth
- 主分类号: H01L2128
- IPC分类号: H01L2128
摘要:
Semiconductor devices having fully metal silicided gate electrodes, and methods for making the same, are disclosed. The devices have shallow S/D extensions with depths of less than about 500 Å. The methods for making the subject semiconductor devices employ diffusion of dopant from metal suicides to form shallow S/D extensions, followed by high energy implantation and activation, and metal silicidation to form S/D junctions having metal silicide connect regions and a fully metal silicided electrode.