High density stacked mim capacitor structure

发明授权

US06559493B2 High density stacked mim capacitor structure 有权

标题翻译：高密度堆叠式电容器结构

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专利标题： High density stacked mim capacitor structure
专利标题（中）： 高密度堆叠式电容器结构
申请号： US10167864

申请日： 2002-06-11
公开(公告)号： US06559493B2

公开(公告)日： 2003-05-06
发明人: Tzyh-Cheang Lee , Shyh-Chyi Wong , Chih-Hsien Lin , Chi-Feng Huang
申请人： Tzyh-Cheang Lee , Shyh-Chyi Wong , Chih-Hsien Lin , Chi-Feng Huang
主分类号： H01L31119
IPC分类号： H01L31119

High density stacked mim capacitor structure

摘要：

A first metal plug is formed in the first layer of dielectric. A freestanding second metal plug is created that aligns with and makes contact with the first metal plug, extending the first metal plug. The second metal plug is surrounded by an opening that has been created in layers of etch stop and dielectric. A layer of capacitor dielectric is deposited over the exposed surfaces of the first and second metal plugs and the inside surfaces of the opening that surrounds the second plug. A layer of metal is created over the capacitor dielectric inside the opening in the layers of etch stop and dielectric.

摘要（中）：

在第一电介质层中形成第一金属插头。产生独立的第二金属插头，其与第一金属插头对准并与第一金属插头接触，延伸第一金属插头。第二个金属插塞由已经在蚀刻停止层和电介质层上形成的开口围绕。电容器电介质层沉积在第一和第二金属插头的暴露表面和围绕第二插头的开口的内表面中。在蚀刻停止层和电介质层的开口内部的电容器电介质上形成一层金属。

公开/授权文献

US20020177271A1 High density stacked MIM capacitor structure 公开/授权日：2002-11-28

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