发明授权
- 专利标题: CPP spin-valve device
- 专利标题(中): CPP自旋阀装置
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申请号: US09480132申请日: 2000-01-10
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公开(公告)号: US06560077B2公开(公告)日: 2003-05-06
- 发明人: Hideo Fujiwara , Gary J. Mankey
- 申请人: Hideo Fujiwara , Gary J. Mankey
- 主分类号: G11B539
- IPC分类号: G11B539
摘要:
A spin-valve device of a CPP structure which has a high resistance, and which generates a high output signal with low current. The CPP spin-valve device including a spin-valve element having a substrate and a layered structure formed on the substrate. The layered structure includes a first thin film layer of ferromagnetic material, a second thin film layer of ferromagnetic material, and a thin non-magnetic layer structure separating the first and second layers. One of the first and second thin film layers is defined as a free layer and the other layer is defined as a pinned layer, where the free layer has a direction of magnetization that is easier to change than a direction of magnetization of the pinned layer by application of a magnetic field. The non-magnetic layer structure includes a conducting part and insulating part, with the conduction part having an area that is smaller than an area of the free layer. The device further includes a device for producing a current flow through the spin-valve element and a field sensor configured to sense variations in resistance of the spin-valve element due to a difference in rotation of the magnetizations in the free layer and the pinned layer caused by an applied magnetic field.
公开/授权文献
- US20020054461A1 Cpp spin-valve device 公开/授权日:2002-05-09
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