- 专利标题： Low leakage current SRAM array
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申请号： US09800015申请日： 2001-03-05
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公开(公告)号： US06560139B2公开(公告)日： 2003-05-06
- 发明人: Lin Ma , Wenliang Chen
- 申请人： Lin Ma , Wenliang Chen
- 主分类号： G11C1100
- IPC分类号： G11C1100
摘要：
An SRAM array is disclosed. The SRAM array includes a plurality of SRAM cells. In one embodiment, the SRAM cells are 6-T SRAM cells that further includes a voltage bias device. The voltage bias device raises the voltage level of a low voltage rail Vss such that the plurality of SRAM cells are connected to a raised low voltage rail.
公开/授权文献
- US20020122329A1 Low leakage current SRAM array 公开/授权日：2002-09-05