发明授权
- 专利标题: Method for forming a thin film
- 专利标题(中): 薄膜形成方法
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申请号: US09810755申请日: 2001-03-16
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公开(公告)号: US06562218B2公开(公告)日: 2003-05-13
- 发明人: Masahiro Yoshimura , Seung-wan Song , Tomoaki Watanabe
- 申请人: Masahiro Yoshimura , Seung-wan Song , Tomoaki Watanabe
- 优先权: JP2000-076423 20000317; JP2001-037901 20010215
- 主分类号: C25D520
- IPC分类号: C25D520
摘要:
A reactive solution with an amount of 250 mL is made of distilled water and LiOH·H2O (4M) melted in the distilled water. Then, the reactive solution is put in a flow-type reactor, and is flown in between an anode electrode and a cathode electrode set in the flow-type reactor at a given temperature and a given flow rate. Then, a given voltage is applied between the anode electrode and the cathode electrode with dropping an oxidizer of hydrogen peroxide (H2O2) into the reactive solution to form a lithium-cobalt oxide thin film on the anode electrode.
公开/授权文献
- US20010052463A1 Method for forming a thin film 公开/授权日:2001-12-20
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