- 专利标题： Nonvolatile memories with floating gate spacers, and methods of fabrication
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申请号： US09881288申请日： 2001-06-13
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公开(公告)号： US06562681B2公开(公告)日： 2003-05-13
- 发明人: Hsing T. Tuan , Vei-Han Chan , Chung-Wai Leung , Chia-Shun Hsiao
- 申请人： Hsing T. Tuan , Vei-Han Chan , Chung-Wai Leung , Chia-Shun Hsiao
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
In a nonvolatile memory, a floating gate includes a portion of a conductive layer (150), and also includes conductive spacers (610). The spacers increase the capacitive coupling between the floating gate and the control gate (170).
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