发明授权
US06563144B2 Process for growing epitaxial gallium nitride and composite wafers
失效
用于生长外延氮化镓和复合晶片的工艺
- 专利标题： Process for growing epitaxial gallium nitride and composite wafers
- 专利标题（中）： 用于生长外延氮化镓和复合晶片的工艺
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申请号： US09824843申请日： 2001-04-02
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公开(公告)号： US06563144B2公开(公告)日： 2003-05-13
- 发明人: Eicke R. Weber , Sudhir G. Subramanya , Yihwan Kim , Joachim Kruger
- 申请人： Eicke R. Weber , Sudhir G. Subramanya , Yihwan Kim , Joachim Kruger
- 主分类号： H01L31072
- IPC分类号： H01L31072
摘要：
A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of &mgr;>400 cm2/Vs for an electron background concentration of 4×1017 cm−3.