The preferred embodiments described herein provide a memory device and method for reliably reading multi-bit data from a write-many memory cell. In one preferred embodiment, a non-volatile, write-many memory cell operative to store multiple bits is provided, and the number of program/erase cycles to the write-many memory cell is limited. Limiting the number of program/erase cycles increases the probability that multi-bit data will be correctly read from the memory cell. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.