Invention Grant
US06570174B1 OPTICAL PROXIMITY EFFECT CORRECTING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS, WHICH CAN SUFFICIENTLY CORRECT OPTICAL PROXIMITY EFFECT, EVEN UNDER VARIOUS SITUATIONS WITH REGARD TO SIZE AND SHAPE OF DESIGN PATTERN, AND SPACE WIDTH AND POSITION RELATION BETWEEN DESIGN PATTERNS
有权
半导体制造工艺中的光学接近效应校正方法，即使在与设计图案的尺寸和形状有关的各种不同情况下，可以充分校正光学近似效应，以及设计图案之间的空间宽度和位置关系
- Patent Title: OPTICAL PROXIMITY EFFECT CORRECTING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS, WHICH CAN SUFFICIENTLY CORRECT OPTICAL PROXIMITY EFFECT, EVEN UNDER VARIOUS SITUATIONS WITH REGARD TO SIZE AND SHAPE OF DESIGN PATTERN, AND SPACE WIDTH AND POSITION RELATION BETWEEN DESIGN PATTERNS
- Patent Title (中): 半导体制造工艺中的光学接近效应校正方法，即使在与设计图案的尺寸和形状有关的各种不同情况下，可以充分校正光学近似效应，以及设计图案之间的空间宽度和位置关系
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Application No.: US09458625Application Date: 1999-12-10
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Publication No.: US06570174B1Publication Date: 2003-05-27
- Inventor: Keiichiro Tounai , Takeshi Hamamoto
- Applicant: Keiichiro Tounai , Takeshi Hamamoto
- Priority: JP10-355239 19981214
- Main IPC: G01N2186
- IPC: G01N2186
Abstract:
An optical proximity effect correcting method in a semiconductor manufacturing process includes adding, detecting, judging, and deleting. The adding includes adding a first correcting region around a portion of a first design pattern. The portion faces a second design pattern. A first corrected design pattern includes the first correcting region and the first design pattern. The detecting includes detecting a space between the first corrected design pattern and the second design pattern. The judging includes judging whether the space is smaller than or equal to a predetermined value. The deleting includes deleting at least a portion of the first correcting region such that the space is larger than the predetermined value, when the space is smaller than or equal to the predetermined value.
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