发明授权
US06570174B1 OPTICAL PROXIMITY EFFECT CORRECTING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS, WHICH CAN SUFFICIENTLY CORRECT OPTICAL PROXIMITY EFFECT, EVEN UNDER VARIOUS SITUATIONS WITH REGARD TO SIZE AND SHAPE OF DESIGN PATTERN, AND SPACE WIDTH AND POSITION RELATION BETWEEN DESIGN PATTERNS
有权
半导体制造工艺中的光学接近效应校正方法，即使在与设计图案的尺寸和形状有关的各种不同情况下，可以充分校正光学近似效应，以及设计图案之间的空间宽度和位置关系
- 专利标题： OPTICAL PROXIMITY EFFECT CORRECTING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS, WHICH CAN SUFFICIENTLY CORRECT OPTICAL PROXIMITY EFFECT, EVEN UNDER VARIOUS SITUATIONS WITH REGARD TO SIZE AND SHAPE OF DESIGN PATTERN, AND SPACE WIDTH AND POSITION RELATION BETWEEN DESIGN PATTERNS
- 专利标题（中）： 半导体制造工艺中的光学接近效应校正方法，即使在与设计图案的尺寸和形状有关的各种不同情况下，可以充分校正光学近似效应，以及设计图案之间的空间宽度和位置关系
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申请号： US09458625申请日： 1999-12-10
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公开(公告)号： US06570174B1公开(公告)日： 2003-05-27
- 发明人: Keiichiro Tounai , Takeshi Hamamoto
- 申请人： Keiichiro Tounai , Takeshi Hamamoto
- 优先权： JP10-355239 19981214
- 主分类号： G01N2186
- IPC分类号： G01N2186
摘要：
An optical proximity effect correcting method in a semiconductor manufacturing process includes adding, detecting, judging, and deleting. The adding includes adding a first correcting region around a portion of a first design pattern. The portion faces a second design pattern. A first corrected design pattern includes the first correcting region and the first design pattern. The detecting includes detecting a space between the first corrected design pattern and the second design pattern. The judging includes judging whether the space is smaller than or equal to a predetermined value. The deleting includes deleting at least a portion of the first correcting region such that the space is larger than the predetermined value, when the space is smaller than or equal to the predetermined value.
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