Invention Grant
US06570197B2 Optical device having sensing TGTs and switching TFTs with different active layer thickness
有权
具有感测TGT的光学器件和具有不同有源层厚度的开关TFT
- Patent Title: Optical device having sensing TGTs and switching TFTs with different active layer thickness
- Patent Title (中): 具有感测TGT的光学器件和具有不同有源层厚度的开关TFT
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Application No.: US09939634Application Date: 2001-08-28
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Publication No.: US06570197B2Publication Date: 2003-05-27
- Inventor: In-Su Joo
- Applicant: In-Su Joo
- Priority: KR00-51295 20000831
- Main IPC: H01L2900
- IPC: H01L2900

Abstract:
A thin film transistor optical detecting sensor includes an array substrate having a transparent substrate, a plurality of sensor thin film transistors disposed on the transparent substrate, each having a first silicon layer of a first thickness, a plurality of storage capacitors, each connected with a corresponding one of the plurality of sensor thin film transistors, storing charges of an optical current, and a plurality of switch thin film transistors, each having a second silicon layer of a second thickness less than the first thickness.
Public/Granted literature
- US20020024097A1 TFT type optical detecting sensor implementing different TFTs and the fabricating method thereof Public/Granted day:2002-02-28
Information query