发明授权
- 专利标题: Semiconductor device having resistive element
- 专利标题(中): 具有电阻元件的半导体器件
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申请号: US09804188申请日: 2001-03-13
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公开(公告)号: US06570239B2公开(公告)日: 2003-05-27
- 发明人: Jun Sakakibara , Hitoshi Yamaguchi
- 申请人: Jun Sakakibara , Hitoshi Yamaguchi
- 优先权: JP2000-079345 20000316
- 主分类号: H01L2126
- IPC分类号: H01L2126
摘要:
A trench is formed in an n+ type substrate in a vertical direction from a main surface of the substrate, and a p type layer is deposited in the trench to have a recess portion. An n+ type layer is embedded in the recess portion. Accordingly, the p type layer is formed, as a resistive element, into a U-shape with ends that are ended on the main surface of the substrate. The resistive element has a resistance length corresponding to a path of the U-shape.
公开/授权文献
- US20010022385A1 Semiconductor device having resistive element 公开/授权日:2001-09-20
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