发明授权
US06570239B2 Semiconductor device having resistive element 有权
具有电阻元件的半导体器件

  • 专利标题: Semiconductor device having resistive element
  • 专利标题(中): 具有电阻元件的半导体器件
  • 申请号: US09804188
    申请日: 2001-03-13
  • 公开(公告)号: US06570239B2
    公开(公告)日: 2003-05-27
  • 发明人: Jun SakakibaraHitoshi Yamaguchi
  • 申请人: Jun SakakibaraHitoshi Yamaguchi
  • 优先权: JP2000-079345 20000316
  • 主分类号: H01L2126
  • IPC分类号: H01L2126
Semiconductor device having resistive element
摘要:
A trench is formed in an n+ type substrate in a vertical direction from a main surface of the substrate, and a p type layer is deposited in the trench to have a recess portion. An n+ type layer is embedded in the recess portion. Accordingly, the p type layer is formed, as a resistive element, into a U-shape with ends that are ended on the main surface of the substrate. The resistive element has a resistance length corresponding to a path of the U-shape.
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