- 专利标题: Method of constructing a capacitor stack for a flat capacitor
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申请号: US09705994申请日: 2000-11-03
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公开(公告)号: US06571126B1公开(公告)日: 2003-05-27
- 发明人: Michael J. O'Phelan , James M. Poplett , Robert R. Tong , A. Gordon Barr , Richard J. Kavanagh , Brian V. Waytashek
- 申请人: Michael J. O'Phelan , James M. Poplett , Robert R. Tong , A. Gordon Barr , Richard J. Kavanagh , Brian V. Waytashek
- 主分类号: A61N102
- IPC分类号: A61N102
摘要:
In one aspect, a method of manufacturing a capacitor includes disposing one or more conductive layers of a first electrode stack in a recess of an alignment mechanism, where the recess is positioned relative to two or more alignment elements. The method further includes placing a separator over the one or more conductive layers where an outer edge of the separator contacts the two or more alignment elements. In one embodiment, a capacitor includes anode and cathode foils having offsetting edge portions. In one embodiment, a multiple tab cathode for a flat capacitor. A plurality of cathode tabs are portioned into a plurality of cathode tab groups positioned in different locations along the edge of the capacitor stack to reduce the amount of space required for connecting and routing the cathode tabs.