发明授权
- 专利标题: Electromigration-resistant copper microstructure
- 专利标题(中): 防电镀铜微观结构
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申请号: US09604539申请日: 2000-06-27
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公开(公告)号: US06572982B1公开(公告)日: 2003-06-03
- 发明人: Cyprian E. Uzoh , Steven H. Boettcher , Patrick W. DeHaven , Christopher C. Parks , Andrew H. Simon
- 申请人: Cyprian E. Uzoh , Steven H. Boettcher , Patrick W. DeHaven , Christopher C. Parks , Andrew H. Simon
- 主分类号: B32B1504
- IPC分类号: B32B1504
摘要:
An electromigration-resistant copper film structure and the process for forming the structure. The film structure contains a high impurity content, is resistant to grain growth, and possesses superior metallurgical, thermo-mechanical, and electrical properties. The process comprises the steps of: (a) providing a seed layer at least indirectly on a substrate, the seed layer having an exposed surface; (b) immersing the substrate in a plating solution; (c) electrodepositing a copper-containing film on the exposed surface of the seed layer, the copper-containing film having a first surface; (d) maintaining the substrate in an immersed state within the plating solution; (e) electrodepositing a further copper-containing film from the plating solution onto the first surface; (f) removing the substrate from the plating solution; and (g) drying the substrate.