Method and apparatus for controlling contamination during the electroplating deposition of metals onto a semiconductor wafer surface

Invention Grant

US06573183B2 Method and apparatus for controlling contamination during the electroplating deposition of metals onto a semiconductor wafer surface 有权

Title translation: 用于在将金属电镀沉积到半导体晶片表面上时控制污染的方法和装置

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Patent Title: Method and apparatus for controlling contamination during the electroplating deposition of metals onto a semiconductor wafer surface
Patent Title (中): 用于在将金属电镀沉积到半导体晶片表面上时控制污染的方法和装置
Application No.: US09965739

Application Date: 2001-09-28
Publication No.: US06573183B2

Publication Date: 2003-06-03
Inventor: Sailesh Mansinh Merchant , Minseok Oh , Deepak A. Ramappa
Applicant: Sailesh Mansinh Merchant , Minseok Oh , Deepak A. Ramappa
Main IPC: H01L21449
IPC: H01L21449

Method and apparatus for controlling contamination during the electroplating deposition of metals onto a semiconductor wafer surface

Abstract:

A method and apparatus for the electroplating deposition of a metal onto a semiconductor wafer surface (29), including vibrationally scrubbing the wafer surface (29) during an electroplating process. At least one transducer (32) is mounted to a wall (33) of an electroplating tool chamber (22). The transducer (32) intermittently delivers sonic energy pulses lasting for one to two seconds to the electroplating solution during the electroplating process.

Abstract(Chinese):

一种用于将金属电镀沉积到半导体晶片表面（29）上的方法和装置，包括在电镀过程中振动洗涤晶片表面（29）。至少一个换能器（32）安装到电镀工具室（22）的壁（33）上。在电镀过程中，换能器（32）间歇地传送持续1至2秒的电能脉冲到电镀溶液。

Public/Granted literature

US20030064586A1 METHOD AND APPARATUS FOR CONTROLLING CONTAMINATION DURING THE ELECTROPLATING DEPOSITION OF METALS ONTO A SEMICONDUCTOR WAFER SURFACE Public/Granted day:2003-04-03

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