Invention Grant
- Patent Title: Apparatus for growing a silicon ingot
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Application No.: US10029949Application Date: 2001-12-31
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Publication No.: US06574264B2Publication Date: 2003-06-03
- Inventor: Hong-Woo Lee , Joon-Young Choi , Hyon-Jong Cho
- Applicant: Hong-Woo Lee , Joon-Young Choi , Hyon-Jong Cho
- Priority: KR2001-0034143 20010616
- Main IPC: H05B300
- IPC: H05B300

Abstract:
An apparatus for growing a silicon ingot including a graphite crucible in which a quartz crucible is placed, a driving axis connected to a lower part of the graphite crucible to revolve and move the graphite crucible up and down so as to support the graphite crucible, a heating element to heat the graphite crucible, and an insulating wall to protect and thermally isolate the graphite crucible, heating means, and driving axis in part from the external environment. The driving axis includes a hollow axis part having a hollow inside, an insulating axis part attached to the bottom of the hollow axis part to inhibit heat transfer, and a cylindrical axis part attached to the bottom of the insulating axis part. The construction of the driving axis reduces a temperature gradient in the molten silicon, improving uniform heat distribution for increased silicon ingot quality.
Public/Granted literature
- US20020191667A1 Apparatus for growing a silicon ingot Public/Granted day:2002-12-19
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