发明授权
US06576565B1 RTCVD process and reactor for improved conformality and step-coverage
有权
RTCVD工艺和反应器，以提高保形性和阶梯覆盖率
- 专利标题： RTCVD process and reactor for improved conformality and step-coverage
- 专利标题（中）： RTCVD工艺和反应器，以提高保形性和阶梯覆盖率
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申请号： US10075152申请日： 2002-02-14
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公开(公告)号： US06576565B1公开(公告)日： 2003-06-10
- 发明人: Ashima Chakravarti , Oleg Gluschenkov , Irene Lennox McStay
- 申请人： Ashima Chakravarti , Oleg Gluschenkov , Irene Lennox McStay
- 主分类号： H01L2131
- IPC分类号： H01L2131
摘要：
An apparatus (110) and method for depositing material on a semiconductor wafer with non-planar structures (114). The wafer (114) is positioned in a chamber (111), and reactive gases (132) are introduced into the chamber (111). The gases (132) and wafer (114) are heated, wherein the gas (132) temperature in the process chamber (111) and in the vicinity of the wafer (114) surface is lower than the temperature of the wafer (114) surface. A material is deposited on the wafer (114) surface using chemical vapor deposition. A gas cooler may be utilized to lower the temperature of the reactive gases (132) while the wafer (114) is heated.