发明授权
US06576927B2 Semiconductor device and GaN-based field effect transistor for use in the same
有权
半导体器件和GaN基场效应晶体管用于相同
- 专利标题： Semiconductor device and GaN-based field effect transistor for use in the same
- 专利标题（中）： 半导体器件和GaN基场效应晶体管用于相同
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申请号： US10084717申请日： 2002-02-25
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公开(公告)号： US06576927B2公开(公告)日： 2003-06-10
- 发明人: Seikoh Yoshida , Hironari Takehara , Takahiro Wada
- 申请人： Seikoh Yoshida , Hironari Takehara , Takahiro Wada
- 优先权： JP2001-062323 20010306; JP2001-090323 20010327
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
The present invention provides a semiconductor device as an FET integrated object having a small effective area, a small ON resistance during operation, a high voltage resistance, and capable of large-current drive. This device comprises one or more FET's each having a gate electrode, a source electrode, and a drain electrode, and arranged side by side on a single plane to constitute a first block which is stacked on a second block having a configuration identical to the first block, wherein the gate electrode, the source electrode, and the drain electrode of the FET(s) of the first block are directly joined with the gate electrode, the source electrode, and the drain electrode of the FET(s) of the second block, respectively.
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